Compact Modeling Framework for Multigate SOI MOSFETs Based on Conformal Mapping Techniques

摘要：

A comprehensive modeling framework for 3D multigate FETs (MugFETs), applicable to FinFETs as well as gate-all-around MugFETs is presented. We use the double-gate FinFET as our reference device and solve the 2D-Laplace equation with the help of conformal mapping techniques. The 2D solution is then extended to 3D structures with the appropriate use of characteristic lengths. The results have been validated with 3D TCAD simulations from ATLAS device simulator. In addition DC-measurements on trigate SOI FinFETs for different fin width have been performed with special emphasis on the subthreshold and linear current regime behaviour. Our measured results agree reasonably well with the model.

作者: Udit Monga Dag-Martin Nilsen Jasmin Aghassi Josef Sedlmeir Tor A. Fjeldly

作者单位: Department of electronics and Telecommunications, Norwegian University of Science and Technology, an Department of electronics and Telecommunications, Norwegian University of Science and Technology, an Infineon Technologies AG, Am Campeon 1-12, Neubiberg, Germany

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1805-1807

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）