An Improved Design of SiPNEV Tunneling Field Effect Transistor

摘要：

PIN tunneling field effect transistor (TFET) is one of the most promising devices due to its low subthreshold swing. In this paper, using TCAD simulation, we investigate the doping and structure dependence of the electric field in PIN TFET. We show that an insertion of a thin N layer into PIN structure (i.e., PNIN TFET) not only enhances the drive current but also improves the reliability of the device. We also show that the device characteristics can be further improved by properly aligning the gate electrodes with respect to the tunneling junction.

作者: W. Cao C. J. Yao D. M. Huang M.-F. Li

作者单位: State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1808-1810

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）