A New Method for Series Resistance Extraction in Poly-Si Thin-Film Transistors

摘要：

A new method for extraction of series resistance is proposed for poly-Si thin-film transistors, hi this method, the extraction procedure is insensitive to the variation in effective channel length and device mobility, since both quantities are included in a single extracted parameter. The method has been successfully applied to a group of poly-Si TFTs with mask channel length from 2 to 30μm. Compared with the estimated series resistance, the extracted result is reasonable.

作者: Yan Zhou Mingxiang Wang Man Wong

作者单位: Dept. of Microelectronics, Soochow University, Suzhou 215006, China Dept. of Electronic and Computer Engineering, the Hong Kong Univ. of Science and Technology, Hong Ko

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1814-1816

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）