Low Leakage Bulk Silicon Substrate Based SDOI FINFETs

摘要：

This work presents a novel low leakage bulk substrate based SDOI (Source-Drain on Insulator) FINFET structure and a new integration scheme for fabrication thereof. Through simulation, SDOI FINFETs were thoroughly compared to Bulk FINFETs and SOI FINFETs. SDOI FINFETs clearly achieved SOI FINFETs like excellent subthreshold characteristics, low leakage current and low capacitance, while maintained high thermal conduction. By combining the benefits from the SOI FINFET and the Bulk FINFET, the SDOI FINFET shows a great potential to replace the planar MOSFET and to further extend Moores law.

作者: Jia Liu Zhijiong Luo Haizhou Yin Huilong Zhu Hefei Wang Feng Yuan

作者单位: Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1820-1822

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）