The Effects of Vacuum Spacer Transistors between High Performance and Low Stand-by Power Devices beyond 16nm

摘要：

The vacuum spacer transistors are compared with the conventional oxide spacer transistors in both high performance device and low standby power device. In high performance device case, with 14nm vacuum spacers, the CMOS inverter delay, switching charge, and switching energy are reduced by 6.6％, 15.6％, and 19.1％, respectively, compared to oxide spacer. In low standby power device case, with 18nm vacuum spacers, the inverter delay is increased by 10％ compared to oxide spacer due to the degradation of on-current.

作者: Jemin Park Chenming Hu

作者单位: Department of Electrical Engineering and Computer Science University of California, Berkeley, CA 94720, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1823-1825

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）