Modeling of Terahertz Resonant Detection of MOS Field Effect Transistor Operating in All Regions under Optical Beating Mode

摘要：

Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection characteristics under the case of optical beating. Furthermore, extensive characteristics of resonant detection under the optical beating mode have been predicted.

作者: Jingxuan Zhu Juncheng Cao Zhifeng Yan Yinglei Wang Xinnan Lin Jin He Wen Wu Zhiwei Liu Wenping Wang Yong Ma

作者单位: The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, W303, West Tower, IER B

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1826-1828

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）