A Compact Model of Resistive Switching Devices

摘要：

In this paper a compact model both for bipolar and unipolar resistive switching device is proposed. Basic I-V characteristics of RRAM are easily and correctly represented by this model. The model is verified by the bipolar RRAM experiment results. The model can be used as simple and fast tool to design and optimize RRAM.

作者: B. Chen R.Q. Han Q.Y.Jun B. Gao F.F. Zhang K.L. Wei Y.S. Chen L.F. Liu X.Y. Liu J.F. Kang

作者单位: Peking University Shenzhen Graduate School, Shenzhen 518055, China Institute of Microelectronics, Pe Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1829-1831

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）