Doping and Temperature Effects on Graphene Nanoribbon Tunneling Field-Effect-Transistors
We study the current-voltage characteristics of ballistic armchair graphene nanoribbon (GNR) Tunneling Field-Effect-Transistors (TFETs) with the p-i-n configuration with different doping concentrations and device temperatures. Our model is based on the Dirac equation embedded in a selfconsistent non-equilibrium Greens function-Poisson solver. It has been found that increasing the doping at the source relative to the drain can increase the IOn more than Ioff. and hence enhance Ion/Ioff- However, the subthreshold swing (SS) is degraded due to the tail of the Fermi-Dirac carrier distribution. Furthermore, lowering the temperature has the combined effects of the lowering the doping concentrations (due to incomplete ionization) and the sharpening of the Fermi distribution. Therefore, controlling the doping profile and the width of the GNR allows for device customizations and enables various TFET device designs for different applications.
Gengchiau Liang S.-K. Chin D. W. Seah K.-T. Lam Ganesh S. Samudra
Department of Electronic and Computer Engineering, National University of Singapore, Singapore 11757 Institute of High Performance Computing, A *STAR, Singapore 138632, Republic of Singapore
国际会议
上海
英文
1835-1837
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）