A 5V/200V SOI Device with a Vertically Linear Graded Drift Region

摘要：

The dependence of the avalanche breakdown voltage on vertically linear doping gradient of the drift region based on Silicon-On-Insulator (SOI) lateral diffuse metal oxide semiconductor (LDMOS) is studied. Vertically linear doping profile (VD) of the LDMOS structure is exhibited to obviously improve safe of operation area (SOA) from the conventional uniform and variable linear doping structure. From the BFOM (Baligas Figure of Merits), optimal relationship between breakdown voltage and on-state resistance (RonA) is found. The simulation results the breakdown voltage of the VD SOI LDMOS device can be improved by 19％,and 35％ and the on-state resistance can be lowered by 19％ and 29％ at 2μm and 3um over conventional. A 200 V LDMOS transistor with RonA of less than 800 mΩ-mm2 based on various SOI layers is reported.

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1838-1840

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）