A Bias Dependent Body Resistance Model for Deep Submicron PDSOI

摘要：

We report a bias dependent body resistance model for deep submicron PDSOI technology. This model is well verified by the measured data based on the 0.35um PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and can be implemented in the SOI MOSFET compact model like BISMSOI.

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1844-1846

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）