A Device-Physics-Basic SPICE Model for PDSOI CMOS SEU
An ion vertical striking on SOI CMOS transistor sensitive region creates an obvious large current resulting in upset of output node. Since parasitic BJT act, the single-event effect (SEE) is enhanced. In order to evaluate this effects, it is desirable to calculate critical charge (Qcrit> charge collected by the drain during the entire SEE) and the duration of output voltage pulse. With ISE TCAD, two-dimensional simulation is used to determine these parameters, assist to examine and analyze electrical behavior. According to the physical mechanism, a device-basic SPICE model is proposed as an engineering approach to predict the single-event upsets (SEU) of integrated circuit. This paper describes explicitly on the parameter extraction and calculation, and shows reasonable agreement with 2-D simulated results.
SEU ISE 2-D simulation SPICE model PDSOI CMOS
Jianhui Bu Jinshun Bi Mengxin Liu Haogang Cai Zhengsheng Han
Institute of Microelectronics of Chinese Academy and Sciences, Beijing 100029, China Department of Mechanical Engineering, Columbia University, New York, NY 10027 USA
国际会议
上海
英文
1847-1849
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）