A 2D Analytical Model of Bulk-silicon Triple RESURF Devices

摘要：

A 2D analytical model of the bulk-silicon triple RESURF devices is proposed. Based on the 2D Poissons solution, the new analytical expressions of the surface potential and electric field distributions are obtained. According to the model and the semiconductor device simulator Medici, the electric field reduction mechanism and breakdown characteristics in the device are discussed. Further, a RESURF doping optimal region for optimizing the drift region concentration is given. All analytical results are well supported by the numerical results obtained by Medici, showing the validity of the model presented here.

作者: Tingting Hua Yufeng Guo Gene Sheu

作者单位: College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, N Department of Computer Science & Information Engineering, Asia University, Taichung, Taiwan, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1850-1852

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）