Use of AlGaN Launcher in Terahertz GaN Gunn Diode

摘要：

The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumulation mode with increased temperature, and the AlGaN launcher GaN Gunn diode can generate better power performance at stable oscillation mode than the conventional notch-doped GaN launcher Gunn diode.

作者: Chunli Yu Linan Yang Qingyang Yao Qi Liu Xuhu Zhang

作者单位: School of Microelectronics, Xidian University, Xian 710071, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1862-1864

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）