Bandstructures of Unstrained and Strained Silicon Nanowire

摘要：

Energy bandstructures of unstrained and strained (100) silicon nanowires are calculated with nearest neighbor (NN) sp3d5s* tight binding model. Square nanowires with four 110 bounding facets of various thicknesses are simulated. It is found that bandgaps of nanowires increase with decreasing the wire thickness. Uniaxial strain effects are accounted for by displacing the silicon atoms and modifying the energy parameters in the tight binding model. The results indicate that both compressive and tensile strains reduce the bandgap and tensile strain reduces the hole effective mass at the valence band edge significantly.

作者: Lining Zhang Haijun Lou Zhiwei Liu Frank He Mansun Chan

作者单位: Peking University Shenzhen Graduate School, China Peking University Shenzhen SOC Key Laboratory, C Peking University Shenzhen Graduate School, China Peking University Shenzhen SOC Key Laboratory, China Peking University Shenzhen Graduate School, China Peking University Shenzhen SOC Key Laboratory, C Hong Kong University of Science and Technology

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1877-1879

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）