A Potential-based Analytic Model for Monocrystalline Silicon Thin-film Transistors on Glass Substrates

摘要：

In this paper a potential based model for monocrystalline silicon thin film transistor (TFT) systems on glass (SOG) substrate from the accumulation to the strong-inversion region is developed. By solving the complete dimensional (ID) Poissons equation, the potential distribution in the channel is obtained. The analytic drain current is expressed accurately base on the potential solution. Compared with TCAD simulations, the proposed current model shows less than 1.05％ errors, with the doping concentrations ranging from 1.5×l016cm-3 to 1.5×1018cm-3 and different bias conditions. The proposed model is appropriate for precise and quick circuit simulation.

作者: Shaodi Wang Mansun Chan Lining Zhang Jian Zhang Wenping Wang Wen Wu Xukai Zhang Zhiwei Liu Wei Bian Frank He

作者单位: The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking Department of ECE, Hong Kong University of Science and Technology, Kowloon, Hong Kong Peking University Shenzhen SOC Key Laboratory, Shenzhen 518057, P. R. China The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1880-1882

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）