An Accurate Compact Model with Skin and Proximity Effects for High Coupling-Coefficient Transformers
An accurate wide-band compact model with proximity effects for on-chip transformers has been developed. According to the physical origin of the elements, method to determine parameters of these elements are offered. Furthermore, a new structure for transformers with high k (coupling coefficient) value has been proposed. Model verification with EMsimulation data of this structure demonstrates the accurate prediction for transformer performance in a wide band.
Hongda Zheng Dajie Zeng Dongxu Yang Li Zhang Zhiping Yu
Institute of Microelectronics, Tsinghua University, Beijing, China 100084
国际会议
上海
英文
1886-1888
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)