A Novel Hybrid-Anode AIGaN/GaN Field-Effect Rectifier with Low

摘要：

A novel hybrid-anode AIGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier, which leads to low operation voltage. As a result, the turn-on voltage of the HA-FER is 0.2 V in comparison with 0.8 V of the conventional Schottky barrier diodes (SBD). The HA-FER shows no degradation in blocking capability.

作者: Zhigang Wang Bo Zhang Wanjun Chen Zhaoji Li

作者单位: School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1889-1891

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）