Current Modeling and Simulation of Dual-Material Surrounding-Gate MOSFET with Asymmetric Halo
The dual-material gate and asymmetrical halo structure is used in surrounding gate MOSFET to improve the performance. By treating the device as three surrounding-gate MOSFETs connecting in series and maintaining current continuity, a comprehensive drain current model is developed for it. It is concluded that the device also exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.
Zun-Chao Li Jin-Peng Xu Lin-Lin Liu
Department of Microelectronics, Xian Jiaotong University, Xian 710049, China
国际会议
上海
英文
1904-1906
2010-11-01(万方平台首次上网日期,不代表论文的发表时间)