Current Modeling and Simulation of Dual-Material Surrounding-Gate MOSFET with Asymmetric Halo

摘要：

The dual-material gate and asymmetrical halo structure is used in surrounding gate MOSFET to improve the performance. By treating the device as three surrounding-gate MOSFETs connecting in series and maintaining current continuity, a comprehensive drain current model is developed for it. It is concluded that the device also exhibits increased current drivability and improved hot carrier reliability. The derived analytical model is verified with numerical simulation.

作者: Zun-Chao Li Jin-Peng Xu Lin-Lin Liu

作者单位: Department of Microelectronics, Xian Jiaotong University, Xian 710049, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1904-1906

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）