LPCVD Process Simulation Based On Monte Carlo Method

摘要：

Mechanisms during low pressure deposition (LPCVD) process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The LPCVD process has then been successfully simulated based on the re-emission models with Monte Carlo method and the Lagrangian method (shorthand denoted as L-type method) for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of LPCVD process and the development of MEMS and IC design.

关键词： L-type method Monte Carlo method process simulation LPCVD MEMS

作者: Jian-Yang Dai Zai-Fa Zhou Qing-An Huang Wei-Hua Li

作者单位: Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1907-1909

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）