A New Extraction Method for Source/Drain Resistance in MOSFETs

摘要：

A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this procedure have been validated by measured I-V characteristics.

作者: Yang-Hua Chang Yao-Jen Liu

作者单位: Graduate School of Optoelectronics, National Yunlin University of Science & Technology, Yunlin 64002, Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1910-1912

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）