A Threshold Voltage Model for the Surrounding-Gate MOSFETs

摘要：

The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poissons Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.

作者: Guanghui Mei Guangxi Hu Peicheng Li Jinglun Gu Ran Liu Tingao Tang

作者单位: ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1919-1921

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）