An Analytic Threshold Voltage Model for the Double-Gate Schottky-Barrier Source/Drain MOSFETs

摘要：

The threshold voltage, Vth of a double-gate SchottkyBarrier (DGSB) source/drain (S/D) metal-oxidesemiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential in the channel is obtained and the results are verified via simulations, good agreement is observed. A new definition for Vth is given, and an analytic expression for V,h is presented. We find that when the silicon thickness, tsi is small (<3 nm), V,h is very sensitive to it. Vth increases dramatically with the decreasing of tsi. Vth also increases with the increasing of the oxide thickness, and with the decreasing of the drain-soirce voltage. These results can be of great help to the ultralargescale integrated-circuit (ULSI) designers.

作者: Peicheng Li Guangxi Hu Guanghui Mei Ran Liu Yi Jiang Tingao Tang

作者单位: ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1922-1924

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）