Analytical models of the transition layer in HEMTs on silicon substrate for device simulation

摘要：

One way to increase the breakdown voltage in heterojunction field-effect-transistors (HFETs) on silicon substrate is to introduce a transition (buffer) layer made of a sandwich of thin AIN/AlGaN layers between the silicon substrate and the GaN well. The effect of this transition layer is to average out and, in this way, to reduce the local mechanical stress that appears between the silicon substrate and the GaN layer because of the different lattice constants of the two layers. In this article we present an analytical model for the simulation of the transition layer in AIN/AlGaN transistors. The model is based on writing explicitly the interface conditions at each boundary and solving the resulting system of equations analytically. The final equation is written in the form of a standard mixed-type boundary condition that can be relatively easy implemented in device simulators.

作者: Petru Andrei

作者单位: Department of Electrical and Computer Engineering, Florida State University, Tallahassee, FL 32312, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1931-1933

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）