Improved mobility model of MOSFETs for device simulation

摘要：

An improved mobility model for device simulation is presented. The model is based on charge density instead of effective surface electric field. Compared to the other models, it accounts for substrate bias effect and channel length dependence.

作者: Wu Qingqing Chen Jing Wang Xi

作者单位: Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200250, China No.865, Changning Rd, Shanghai

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1934-1936

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）