Modeling Low Frequency Noise in PDSOI MOSFETs for Analog and RF Applications

摘要：

In this paper we present the modeling of low frequency in 0.18μm PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.

作者: S. Sirohi S. Khandelwal

作者单位: IBM Semiconductor Research & Development Centre, Bangalore, India

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1940-1942

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）