Simple Approach for Statistical Modeling of Process Impacts on CMOS Device Variations in VLSI Applications

摘要：

A novel methodology to statistically analyze the statistics on small device performance is presented for the first time. To verify the accuracy of analysis and modeling, TCAD simulation is used to mimic possible process-induced and random fluctuations. The proposed approach precisely decouples various process dependency of the device electric behavior and predicts the device performance trend induced by these variables.

作者: Meng Li Qingqing Liang Huicai Zhong Huilong Zhu

作者单位: Institute of MicroElectronics of Chinese Academy of Sciences 3 Bei Tu Cheng West Road, Beijing, China, 100029

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1943-1945

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）