Modeling the Parasitic Bipolar Device in the 40nm PD SOI NMOS Device Considering the Floating Body Effect

摘要：

This paper reports modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during transient operations could be modeled. During the turn-on transient by imposing a step voltage from 0V to 2V at the gate, the case with a slower rise time shows a faster turn-on in the drain current due to a stronger function of the parasitic bipolar device from smaller displacement currents through the gate oxide, as reflected in the current gain, as verified by the experimentally measured results.

作者: C. H. Chen J. B. Kuo D. Chen C. S. Yeh

作者单位: Dept. of Electrical Eng, BL-528, National Taiwan University Roosevelt Rd. Sec 4, Taipei, Taiwan 106- UMC, Hsinchu, Taiwan 300

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1946-1948

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）