Evaluation the Layout Dependences on Strained 22nm NMOSFETs

摘要：

For NMOSFETs with tensile stress liner, the contact position and the neighboring gates affect the mechanical stress distribution in the device. The effects of symmetrical and asymmetrical layout on 22nm NMOSFETs are studied, and the performance of the device is compared.

作者: Jieyu Qin Gang Du Ruqi Han Xiaoyan Liu

作者单位: Shenzhen Graduate School, Peking University, Guangdong 518055, China Institute of Microelectronics, Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 1949-1951

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）