PECVD amorphous silicon suboxide films for surface passivation of silicon solar cells

摘要：

The surface passivation properties of hydrogenated amorphous silicon suboxides (α-SiO_x:H) deposited by plasma-enhanced chemical vapour deposition (PECVD) have been investigated. The process gases were nitrous oxide and a mixture of silane and helium at a deposition temperature of～250 ℃. Minority carrier lifetimes up to 270 us on 4·Ω·cm ptype float-zone silicon wafers were obtained. With thermal annealing, the carrier lifetimes of the α-SiO_x:H passivated silicon wafers exceed 670 us, correlating to surface recombination velocities of 30 cm/s. Optical analysis revealed a distinct decrease of light absorption in the α-SiOx:H films compared to commonly used intrinsic amorphous silicon passivation used in heterojunction solar cells.

作者: Guang-Zhi Jia Hong-Gang Liu Hu-Dong Chang

作者单位: The Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 2013-2015

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）