Impacts of Process Parameters on CIGS Solar Cells Prepared by Selenization Process with Se Vapor

摘要：

The CuIn_(1-x)Ga_xSe_2 (CIGS) films are prepared by the selenization process including the deposition of the metal precursors followed by heating the metal precursors in a Se overpressure. The impacts of Se deposition rates on the morphology, grain growth, and atomic ratios of the resulting CIGS films are investigated. The CIGS films prepared at the high Se flow rate exhibit the improved surface morphology. The CIGS films prepare by slenization process with Se vapor are made into solar cells. The best active-area efficiency of 11.9％ for the CIGS solar cells fabricated with the given selenization conditions is achieved.

作者: Chia-Hua Huang Y. C. Shih Wen-Jie Chuang Chun-Ping Lin

作者单位: Department of Electrical Engineering, National Dong Hwa University, Hualien 97401 Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 2019-2021

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）