A Novel CMOS Inverter Composed of a Junctionless NMOSFET and a Gated N~--N-P~+Transistor for ULSI applications

摘要：

In this paper, a novel non-classical CMOS inverter with simple process and high integration density is proposed, which is composed of a junctionless NMOSFET and a gated N~--N-P~+ transistor for driver and load, respectively. Also, the gated N~--N-P~+ transistor performance is also investigated. Based on the numerical simulations, we find out that the carrier mobility of the gated N~--N-P~+ transistor is enhanced significantly. Besides, the layout area of the novel CMOS inverter are reduced more than 46,1％ because of its unique shared contacting for output node, when compared with the conventional layout area.

作者: Kuan-Yu Lu Jyi-Tsong Lin Hsuan-Hsu Chen Yi-Chuen Eng

作者单位: Dept. of Electrical Engineering, National Sun Yat-Sen University 70 Lien-Hai Rd., Kaohsiung 80424 Taiwan, R.O.C

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 2064-2066

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）