Single Event Effects Resulted by parasitic structures of MOS transistors in SOI CMOS ICs and Their Hardness

摘要：

The paper describes the parasitic structures of MOS transistors in SOI CMOS ICs at first. Then the influences of the parasitic structures on single particles radiation effect of MOS transistors in SOI CMOS ICs are presented. Finally the hardness methods of single event effects resulted by the parasitic structures of MOS transistors are given and the estimate about their excellence is made out.

作者: Zhongli Liu Ru Huang Jiantou Gao Shoubin Xue Fang Yu

作者单位: Institute of Semiconductors , CAS, Beijing, 100083 China Institute of Microelectronics, Peking University, 100871 Beijing, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 2074-2076

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）