InP nanowires formed by Au-assisted Metalorganic Chemical Vapor Deposition: Effect of growth temperature

摘要：

Introduction Recently, semiconductor nanowires (NWs) are intensively studied due to their potential applications in nanoscale electronics and photonics. Nanowires-based lasers, photodetectors, field effect transistors and single-electron memory devices have already been demonstrated 1-3. The vapor-liquid-solid (VLS) mechanism, using metal nanometer-scale particles as catalyst, is a commonly used method for semiconductor NWs growth, in which Au nanoparticles (NPs) have been generally used in this method 4, 5. At growth temperature, Au NPs on the substrate surface form liquid alloy NPs with the group Ⅲ growth precursor(s). Semiconductor NWs are grown from supersaturated liquid alloy NPs.

关键词： nanowires VLS InP MOCVD

作者: Jingwei Guo Hui Huang Xian Ye Xiaomin Ren Shiwei Cai Wei Wang Qi Wang Yongqing Huang

作者单位: Key Laboratory of Information Photonics & Optical Communications Ministry of Education Beijing Unive Key Laboratory of Information Photonics & Optical Communications Ministry of Education Beijing Unive Xia ZhangKey Laboratory of Information Photonics & Optical Communications Ministry of Education Beij

会议类型: 国际会议

会议名称: The 2nd International Conference on Nanomechanics & Nanocomposites(第二届国际纳米力学与纳米复合材料会议)

会议地点: 北京

会议语种:英文

页码: 445-446

在线出版日期: 2010-10-10（万方平台首次上网日期，不代表论文的发表时间）