Effects of Nanoscale Patterns on the Spectral Absorptance of Wafers
This paper presents a parametric study of the radiative properties of patterned wafers with a polysilicon gate array on the Si substrate, considering the effect of wavelength and polarization. While the gate sizes are very small compared to wavelength, the results show rather unusual phenomena. The absorptance calculated by effective medium theory (EMT) is in agreement with finite-difference time-domain (FDTD) in the cases with small gate and period sizes. With the increase of period and decrease of the ratio of the gate width to the pattern pitch, both EMT and FDTD results for TM mode approach to pure silicon since the grating effect diminishes. Besides, the TE absorptance curve separates from that of plain Si at the wavelength equals to the grating period, this is because the gate can interact with its neighboring region by diffraction and the diffraction effects are weak, when the wavelength is small. It also shows a slight increase in the gate height can drastically increase the absorptance and the increased gate height shifts the peak absorptance to longer wavelength. This work is of great importance for optimization of advanced annealing techniques in semiconductor manufacturing.
Finite-difference time-domain method effective medium theory spectral absorptance patterned wafer
Aihua Wang Jiuju Cai
SEPA Key Laboratory on Eco-industry, Northeastern University, Shenyang 110819 China
国际会议
2010 International Conference on Advanced Mechanical Engineering(2010年先进机械工程国际学术会议 AME 2010)
洛阳
英文
145-148
2010-09-04（万方平台首次上网日期，不代表论文的发表时间）