Modeling on the Ground Wafer Shape in Wafer Rotational Grinding
During the silicon wafer grinding, the different process parameters could cause the silicon wafer shape greatly different. Based on the rotational coordinate principle of kinematics, a theoretical model of the ground wafer shape in rotational grinding process is developed, in which many critical factors are considered in this paper. These factors mainly include the parameters of the dressing vacuum chuck and wafer grinding etc. And the mathematical equation of the ground wafer shape is derived. Moreover, as one of the important indexes, TTV(total thickness variation) is researched and analyzed. The equation of TTV is given. The built model can offer a theoretical foundation for further experimental researching. The research results are significant to effectively control the ground wafer shape in a certain.
Silicon wafer Ultra-precision grinding Wafer shape Mathematical model
Keyan Tang Renke Kang
The Engineering & Technology College of Chengdu University of Technology,Leshan Sichuan, 614007 Chin Dalian University of Technology The Mechanical College, Dalian Liaoning 116023, China
国际会议
2010 International Conference on Advanced Mechanical Engineering(2010年先进机械工程国际学术会议 AME 2010)
洛阳
英文
694-697
2010-09-04（万方平台首次上网日期，不代表论文的发表时间）