A 60 GHz LNA with 18.6 dB gain and 5.7 dB NF in 90nm CMOS

摘要：

A 60 GHz low noise amplifier is implemented in a commercial 90nm RF CMOS process. A scalable model based on electromagnetic simulation is adopted to model on-chip microstrip transmission lines. Firstpass silicon success has been achieved by accurate modeling of passive and active devices and careful layout. The three-stage LNA achieves 18.6 dB gain, a noise figure of 5.7 dB and an input PdB of-14.8 dBm. It consumes 24 mA from a 1.2 V supply. The total LNA die area with pads is 1.4 x OS mm2.

关键词： CMOS low none amplifier microstrip millimeter wave

作者: Kai Kang James Brinkhoff Fujiang Lin

作者单位: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research) 11 Science Park Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research) 11 Science Park Institute of Microelectronics, AISTAR (Agency for Science, Technology and Research) 11 Science Park

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 164-167

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）