A 10-30-GHz CMOS Distributed Amplifier for UWB Applications

摘要：

In this paper, a high bandwidth, low power consumption, and high gain-flatness distributed amplifier (DA) is presented. It is fabricated using a standard 0.13-pm CMOS process with six metal layers. The DA has a unity-gain cutoff frequency of 40GHz. The DA chip achieves measured results of 8dB gain, with a gain flatness of ±l-dB over the bandwidth of 10-30GHz. And, the noise figure is between 4.2 and 5.7dB. Power consumption and current of the distributed amplifier are 25.2mW and 21mA at 1.2V supply voltage, respectively. Compared with traditional distributed amplifiers, using the cascade distributed amplifier can obtain more gain and better flatness.

作者: Chia-Hsun Chen Hui-Chen Hsu Wu-Shiung Feng

作者单位: Department of Electronic Engineering, Green Technology Research Center, Chang Gung University, Kwei-Shan, Tao-Yuan, Taiwan

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 266-269

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）