会议专题

Analysis of the Effects of Parasitic Capacitance and Inductance on Inverse Class E Power Amplifier

In this paper, an analysis is performed to determine the effects of the power transistors parasitic capacitance and inductance on the performance of inverse Class E power amplifiers. The theoretical analysis shows that the inverse Class E power amplifiers performance does not monotonicaily vary with the increasing parasitic output capacitance. Numerical results are given to show the variations of output signals magnitude and phase, drain efficiency, and other parameters about the nonoptimum switching conditions. After that, the equation to determine the maximum frequency of the inverse Class E power amplifier is also proposed.

Fei You Songbai He

School of Electronic Engineering University of Electronic Science and Technology of China, Chengdu, China, 610054

国际会议

2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

成都

英文

456-459

2010-05-08(万方平台首次上网日期,不代表论文的发表时间)