A Novel Empirical Model for SiC MESFETs with Self Heating Effect

摘要：

In this paper, a novel empirical model based on Angelov model for SiC MESFETs with self-heating effect is presented. Modifications of drain current and nonlinear capacitive model are proposed to adapt to the measured date without the thermal subcircuit. These new models could simplify the equivalent circuit topology and are easier to implement in CAD simulation tools. A good agreement has been obtained between simulated and measured results.

作者: Oupeng Li Wen Huang Yunchuan Guo Yongbo Chen Ruimin Xu

作者单位: Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 470-472

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）