Mobile Space-Charge Effects on THz-Frequency Characteristics and Parasitic Series Resistance of InP IMPATT Device at Elevated Junction Temperature
Extensive simulation experiments are carried out for the first time on the feasibility of THz power generation from an InP based Double Drift Transit Time diode operating at elevated junction temperature (250*C>. The effects of mobile space charge on the THz frequency performance as well as on the parasitic series resistance (Rs) of the device are also investigated by a generalized simulation scheme. The study reveals that at the optimized bias current density of 3.2x10* Am 2, the device is capable of delivering output power density of 3 xlO Wm-2 with an efficiency of 7％. With the increasing bias current density the space charge effects are found to become prominent and this causes serious degradation of THz performances of the device as far as output power density, efficiency and negative resistivity profiles are concerned. It is observed that at a high bias current density of 7x108 Am2, space charge increases the value of Rs significantly (—38％). These optimized simulation data may be suitably used for fabrication of InP -IMPATT device at 0.3 THz region for application in high-power THz module.
double drift IMPATT elevated junction temperature high output power density mobile space charge parasitic series resistance
Moumita Mukherjee
Centre of MM-wave Semiconductor Devices & Systems (A joint venture of Defence Research and Dev. Org.(DRDO, Ministry of Defence, Govt. of India) and University of Calcutta), University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India
国际会议
成都
英文
480-483
2010-05-08（万方平台首次上网日期，不代表论文的发表时间）