Impact of Bias Current and Geometry on Noise performance of SiGe HBT Low Noise Amplifier

摘要：

The noise figure of SiGe HBT for low noise amplification is analyzed and its intrinsic minimum noise fignre is expressed analytically. Four types of SiGe HBTs with different transistor geometry of emitter stripe width, emitter stripe length and base stripe number were fabricated using a state-of-art SiGe HBT technology. The considerations involved in the judicious choice of biased current and transistor geometry are explored through theory data and measuring results. A conclusion is drawn that an optimum noise figure can be achieved by proper choice of biased current and transistor geometry with longer emitter length and more base stripe number.

作者: Hongyun Xie Wanrong Zhang Pei Shen Liang Chen Botao Sun Yunxia You

作者单位: College of Electronic Information and Control Engineering Beijing University of Technology Beijing, 100124 China

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 492-495

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）