SOI SJ-LDMOS with Added Fixed Charges in Buried Oxide

摘要：

A high voltage Superj unction LDMOS on silicon-oninsulator (SOI) with added fixed charges is proposed in this paper. The increased charges enhance the electric field in the buried-oxide Layer (BOX), and the BOX takes on the almost vertical voltage. The modulated vertical electric field suppresses the charge imbalance in Superjunction caused by the substrate-assisted depletion effect, which improves the breakdown voltage. In addition, the enhanced electric field employs the thinner BOX, which is useful to minimize self-beating effects.

作者: Wenlian Wang

作者单位: State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, Sichuan, P. R. China, 610054 National Key Laboratory of Science and Technology on Electronic Test and Measurement, North University of China, Taiyuan,Shanxi, P. R. China, 030051

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 660-663

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）