Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform segment spacing

摘要：

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-Bniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 427.465K to 417.03K, the thermal resistance reduce from 170KAV to 156K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

作者: Liang Chen Wan-rong Zhang Dong-yue Jin Ying Xiao Ren-qing Wang Ning Hu

作者单位: College of Electronic Information and Control Engineering, Beijing University of Technology Beijing, 100124,China

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 664-666

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）