Parameter Extraction of SOILDMOS based on the HISIMHV model

摘要：

As an RF power device, SOILDMOS has a huge market demand and broad development prospects. In this paper ,we conduct extensive measurement of the SOILDMOS chip using the vector network analyzer, microwave probe station, semiconductor parameter analyzer. The measuring results are obtained with Agilent IC-CAP 2008. With these results, SOILDMOS can be modeled based on the HiSIM-HV model. The parameter extraction and curve fitting are carried out with the IC-CAP tool. The experimental results show that the parameters extracted based on the HiSIM-HV model perform well.

作者: Miao Tianle Li WenJun Wang Huang Shentu Xudan Liu Jun Sun lingling

作者单位: Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou, Zhejiang, 310018, China

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 683-686

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）