A 5.25GHz GaAs PHEMT Power Amplifier for 802.11a Application

摘要：

A 5.25GHz GaAs PHEMT power amplifier for 802.11a application has been realized in the OMMIC 0.2um AlGaAs/InGaAs/GaAs PHEMT process. To guarantee the PHEMT unconditionally stable, a combined stabilizing circuit is used. Under a single supply voltage of + 3.5V, this power amplifier exhibits linear output power of 24.8dBm (Pi,?), small signal gain of 25.6dB and the power added efficiency (PAE) of 22％ at P1db. The die size is only 1.5mm×1.0mm.

作者: Yanjun Peng K.F. Tsang Ling Sun Huaxiang Lu Yanjin Li Weiping Jing

作者单位: Jiangsu Province Key Lab of ASIC Design, Nantong University, Nantong 226004, China State Key Laborat Department of Electronic Engineering, City University of Hong Kong, Hong Kong Jiangsu Province Key Lab of ASIC Design, Nantong University, Nantong 226004, China

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 693-695

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）