Accumulation-Mode MOS Varactor Modeling for RF Applications Valid up to 40GHz

摘要：

This paper presented a RF model of an accumulationmode MOS varactor for RF applications. Based on this model, simple and continuous equation has been used for describing the characteristics of the device in all operation regions. With a single topology composed of lumped elements, this model can be easily used in commercial circuit simulators. Based on Sparameter measurement, excellent agreement was obtained between measured data and model up to 40GHz.

作者: Jiawei Hu Zhiqun Li Qin Li Wei Li Li Zhang

作者单位: Institute of RF- & OE-ICs, Southeast University, 210096, Nanjing, China Institute of RF- & OE-ICs, Southeast University, 210096, Nanjing, China School of Integrated Circuit

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 885-888

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）