Research on Si-based MEMS Process in Development 3D Millimeter-Wave Multi-Chip Module Package
A low cost & feasible system on package solution on the basis of BCB and silicon wafer (10 Ohm-nun)—SiBased 3D MMCM package solution is presented in this paper. What is more, a standard Si-Based MEMS process is employed to achieve package and revision of a GaAs-Based Monolithic Amplifier circuit. The measured results show that input return loss is less than 20 dB; moreover, small signal gain is more than 17 dB across 21 GHz to 26 GHz. The excellent measured results make the Si-based 3D-MMCM package solution a very attractive and feasible candidate for millimeter-wave 3D system level package applications. It is a step towards achievement of 3D system level package meeting excellent millimeter-wave performance.
MMCM System on package Millimeter-wave GaAs MMIC Amplifier
Liang Wu Le Luo Huajiang Wang Jiajie Tang Rong Qian Yang Hou Wei Wang Sun Hao lingyun Li Xiaowei Sun
Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences. Shanghai Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences. Shanghai
国际会议
成都
英文
1049-1052
2010-05-08（万方平台首次上网日期，不代表论文的发表时间）