LOD-FDTD Method for Physical Simulation of Semiconductor Devices

摘要：

This paper describes a locally one-dimensional finite-difference time domain method for the twodimensional time-dependent simulation of semiconductor devices. This approach leads to significant reduction of the semiconductor simulation time. We can reach over 80％ reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.

关键词： LOD-FDTD Semiconductor Devices Drift- Diffusion Model Physical Simulation

作者: R. Mirzavand A. Abdipour G. Moradi W.H.A. Schilders M. Movahhedi

作者单位: Electrical Engineering Department Amirkabir University of Technology Tehran, Iran Department of Mathematics and Computer Science Eindhoven University of Technology Eindhoven, The Net Electrical Engineering Department Shahid Bahonar University of Kerman Kerman, Iran

会议类型: 国际会议

会议名称: 2010 International Conference on Microwave and Millimeter Wave Technology(2010国际微波与毫米波技术会议 ICMMT2010)

会议地点: 成都

会议语种:英文

页码: 1321-1324

在线出版日期: 2010-05-08（万方平台首次上网日期，不代表论文的发表时间）