InGaP/GaAs/InGaAs Doped-Channel Field-Effect Transistor Using Camel-Like Gate Structure
In this article, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n+-GaAs/p+-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n+-InGaAs channel layer, the effective conduction band discontinuity (AEc) is substantially extended and a high gate turn-on voltage up to 2.0 V is obtained. The device exhibits a relatively broad gate voltage swing resulting from the high gate turn-on voltage. In addition, a maximum drain current of 393 mA/mm and a maximum transconduetance of 96 mS/mm are measured. These results indicate that the studied device is suitable for signal amplifier and linear circuit applications.
Jung-Hui Tsai Der-Feng Guo Yuan-Hong Lee Ning-Feng Dale Wen-Shiung Lour
Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Ka Department of Electronic Engineering, Air Force Academy, P.O. Box 14-49 Kang-shan, Kaohsiung County Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202,
国际会议
成都
英文
1476-1479
2010-05-08（万方平台首次上网日期，不代表论文的发表时间）