Effect of Ridge Passivation Layers on the Optical Characteristics of InGaN Laser Diodes

摘要：

The author investigates the optical properties of 405-nm-emitting InGaN blue-violet laser diodes (LDs) for several ridge passivation layers both experimentally and theoretically. Three kinds of dielectric layers, SiO2, SixNy, and AlxGa1-xN, are deposited on the ridge of LD structures, and the optical characteristics for each structure are compared. The LD structure with the AlxGa1_xN passivation layer shows the smallest divergence angle in the horizontal direction of the far-field pattern, which is attributed to the much larger refractive index of the AlxGa1-xN passivation layer compared to that of SiO2and SixNy layers. The measured far-field divergence angle also agrees well with simulation results obtained from the effective index method. In addition, the AlxGa1-xN passivation layer is found to be advantageous for achieving transverse single-mode operation, which is an important characteristic for high-capacity optical data-storage applications of InGaN LDs.

关键词： InGaN Laser diode Far-field pattern

作者: Han-Youl Ryu

作者单位: Department of Physics, Inha University, Incheon 402-751

会议类型: 国际会议

会议名称: 2009 Korea-China Symposium on Advanced Functional Films for Information(2009中韩先进信息功能薄膜研讨会)

会议地点: 兰州

会议语种:英文

页码: 1350-1354

在线出版日期: 2009-08-16（万方平台首次上网日期，不代表论文的发表时间）